1.2v drive nch + pch mosfet VT6M1 ? structure ? dimensions (unit : mm) silicon n-channel mosfet/ silicon p-channel mosfet ? features 1) low on-resistance. 2) small package(vmt6). 3) low voltage drive(1.2v drive). ? application switching ? packaging specifications ? inner circuit package taping code t2cr basic ordering unit (pieces) 8000 VT6M1 ? ? absolute maximum ratings (ta = 25 ? c) tr1 : n-ch tr2 : p-ch drain-source voltage v dss 20 ? 20 v gate-source voltage v gss ? 8 ? 10 v continuous i d ? 100 ? 100 ma pulsed i dp ? 400 ? 400 ma w / total w / element channel temperature tch ? c range of storage temperature tstg ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. type drain current parameter 0.12 power dissipation p d 0.15 unit limits ? 55 to ? 150 symbol 150 (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ? 1 esd protection diode ? 2 body diode *1 *2 1.2 0.5 0.130.16 0.8 0.1 0.4 0.4 (6) (5) (4) (1) (2) (3) 1.2 0.92 0.14 0.14 vmt6 abbreviated symbol : m01 ?2 ?2 ?1 ?1 (1) (2) (6) (5) (3) (4) 1/8 2011.09 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
VT6M1 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs =8v, v ds =0v drain-source breakdown voltage v (br)dss 20 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =20v, v gs =0v gate threshold voltage v gs (th) 0.3 - 1.0 v v ds =10v, i d =100 ? a - 2.5 3.5 i d =100ma, v gs =4.5v - 3.0 4.2 i d =100ma, v gs =2.5v - 3.8 5.3 i d =50ma, v gs =1.8v - 4.5 9.0 i d =20ma, v gs =1.5v - 6.0 18.0 i d =10ma, v gs =1.2v forward transfer admittance l y fs l 180 - - ms v ds =10v, i d =100ma input capacitance c iss - 7.1 - pf v ds =10v output capacitance c oss - 3.3 - pf v gs =0v reverse transfer capacitance c rss - 1.7 - pf f=1mhz turn-on delay time t d(on) -5-nsv dd 10v, i d =50ma rise time t r -4-nsv gs =4.5v turn-off delay time t d(off) - 20 - ns r l =200 ??? r g =10 ? fall time t f -38-ns *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =100ma, v gs =0v *pulsed parameter conditions conditions parameter static drain-source on-state resistance r ds (on) ? * * * * * * * 2/8 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6M1 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 10v, v ds =0v drain-source breakdown voltage v (br)dss ? 20 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss - ? 1 ? av ds = ? 20v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 10v, i d = ? 100 ? a - 2.5 3.8 i d = ? 100ma, v gs = ? 4.5v - 3.4 5.1 i d = ? 50ma, v gs = ? 2.5v - 4.8 8.2 i d = ? 20ma, v gs = ? 1.8v - 6.0 13.2 i d = ? 10ma, v gs = ? 1.5v - 13.3 53.2 i d = ? 1ma, v gs = ? 1.2v forward transfer admittance l y fs l 120 - - ms v ds = ? 10v, i d = ? 100ma input capacitance c iss - 15.0 - pf v ds = ? 10v output capacitance c oss - 4.0 - pf v gs =0v reverse transfer capacitance c rss - 1.5 - pf f=1mhz turn-on delay time t d(on) - 46 - ns v dd ? 10v, i d = ? 50ma rise time t r - 62 - ns v gs = ? 4.5v turn-off delay time t d(off) - 325 - ns r l =200 ??? r g =10 ? fall time t f - 137 - ns *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 100ma, v gs =0v *pulsed parameter conditions conditions ? static drain-source on-state resistance r ds (on) parameter * * * * * * * * * * * 3/8 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6M1 ? electrical characteristic curves tr.1(nch) 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 1.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 0.02 0.04 0.06 0.08 0.1 0 0.2 0.4 0.6 0.8 1 v gs = 1.2v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 1.8v v gs = 1.5v t a =25 c pulsed 0.0001 0.001 0.01 0.1 1 0 0.5 1 1.5 2 v ds = 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 1.2v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.5v . t a =25 c pulsed 0 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 v gs = 1.2v v gs = 4.5v v gs = 4.0v v gs = 2.5v v gs = 1.8v v gs = 1.5v t a =25 c pulsed 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 2.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 1.8v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain - source on - state resistance vs. drain current( ) fig.5 static drain - source on - state resistance vs. drain current( ) fig.6 static drain - source on - state resistance vs. drain current( ) fig.7 static drain - source on - state resistance vs. drain current( ) drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] gate - source voltage : v gs [v] drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] fig.8 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] drain current : i d [a] drain current : i d [a] fig.9 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on ) [m ? ] 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = 1.2v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 4/8 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6M1 0 2000 4000 6000 8000 10000 0 2 4 6 8 t a =25 pulsed i d = 0.1a i d = 0.01a 0.01 0.1 1 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 0.01 0.1 1 10 100 c iss c oss c rss t a =25 c f=1mhz v gs =0v 1 10 100 1000 0.01 0.1 1 t f t d(on) t d(off) t a =25 c v dd =10v v gs =4.5v r g =10 pulsed t r fig.11 reverse drain current vs. sourse - drain voltage fig.12 static drain - source on - state resistance vs. gate source voltage fig.14 typical capacitance vs. drain - source voltage fig.13 switching characteristics source current : i s [a] source - drain voltage : v sd [v] static drain - source on - state resistance : r ds ( on ) [m ? ] gate - source voltage : v gs [v] switching time : t [ns] drain - current : i d [a] drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 0.01 0.1 1 v ds = 10v pulsed t a = - 25 c t a =25 c t a =75 c t a =125 c fig.10 forward transfer admittance vs. drain current forward transfer admittance : |y fs | [s] drain - current : i d [a] 5/8 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6M1 tr.2(pch) 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = - 1.2v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 0.02 0.04 0.06 0.08 0.1 0 0.2 0.4 0.6 0.8 1 t a =25 c pulsed v gs = - 1.5v v gs = - 1.2v v gs = - 4.5v v gs = - 4.0v v gs = - 2.5v v gs = - 2.0v v gs = - 1.8v 0.0001 0.001 0.01 0.1 1 0 0.5 1 1.5 2 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = - 1.2v v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v t a =25 c pulsed 0 0.02 0.04 0.06 0.08 0.1 0 2 4 6 8 10 v gs = - 1.2v v gs = - 1.5v t a =25 c pulsed v gs = - 4.5v v gs = - 4.0v v gs = - 2.5v v gs = - 2.0v v gs = - 1.8v 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = - 2.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = - 4.5v pulsed 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = - 1.8v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ) fig.3 typical transfer characteristics fig.4 static drain - source on - state resistance vs. drain current( ) fig.5 static drain - source on - state resistance vs. drain current( ) fig.6 static drain - source on - state resistance vs. drain current( ) fig.7 static drain - source on - state resistance vs. drain current( ) drain current : - i d [a] drain - source voltage : - v ds [v] drain - source voltage : - v ds [v] drain current : - i d [a] drain current : - i d [a] gate - source voltage : - v gs [v] drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 100 1000 10000 100000 0.0001 0.001 0.01 0.1 1 v gs = - 1.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.8 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] fig.9 static drain - source on - state resistance vs. drain current( ) static drain - source on - state resistance : r ds ( on )[m ? ] t a = 125 c t a = 75 c t a = 25 c t a = - 25 c drain - current : - i d [a] 6/8 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6M1 0.01 0.1 1 0.01 0.1 1 v ds = - 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.10 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 0 2000 4000 6000 8000 10000 0 2 4 6 8 10 i d = - 0.1a i d = - 0.001a t a =25 c pulsed 0.01 0.1 1 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 1 10 100 0.01 0.1 1 10 100 c oss c rss ta=25 c f=1mhz v gs =0v c iss 10 100 1000 0.01 0.1 1 t r t f t d(on) t d(off) ta=25 c v dd = - 10v v gs = - 4.5v r g =10 pulsed fig.11 reverse drain current vs. sourse - drain voltage fig.12 static drain - source on - state resistance vs. gate source voltage fig.13 switching characteristics source - drain voltage : - v sd [v] static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : - v gs [v] switching time : t [ns] drain - current : - i d [a] gate - source voltage : - v ds [v] capacitance : c [pf] fig.14 typical capacitance vs. drain - source voltage reverse drain current : - i s [a] 7/8 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
VT6M1 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) 8/8 2011.09 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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